Samsung DDR3 8GB 1600MHz 8GB vs A-DATA Technology AO2P26KC8T1-BPYS 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的写入速度，GB/s

9.6 8.4

测试中的平均数值

A-DATA Technology AO2P26KC8T1-BPYS 8GB

需要考虑的原因
A-DATA Technology AO2P26KC8T1-BPYS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

15.4 14.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

14.9 15.4
写入速度，GB/s

9.6 8.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 2513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C19-16GSXK 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston KHX3000C16D4/16GX 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMD16GX4M4C3200C15 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston 9905630-066.A00G 16GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston 9905744-066.A00G 32GB

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Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

Kingston SMD4-S8G48HJ-26V 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240