Samsung DDR3 8GB 1600MHz 8GB vs Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

需要考虑的原因
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.7 14.9

测试中的平均数值
更快的写入速度，GB/s

13.9 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

14.9 16.7
写入速度，GB/s

9.6 13.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMR32GX4M4C3000C15 8GB

Corsair CMR32GX4M4C3000C15 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

Corsair CMD32GX4M4C3466C16W 8GB

Corsair CMD32GX4M4C3466C16W 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB