Samsung DDR3 8GB 1600MHz 8GB vs Corsair CMD64GX4M4B2800C14 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CMD64GX4M4B2800C14 16GB

Corsair CMD64GX4M4B2800C14 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Corsair CMD64GX4M4B2800C14 16GB

需要考虑的原因
Corsair CMD64GX4M4B2800C14 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 43

左右 -72% 更低的延时
更快的读取速度，GB/s

15 14.9

测试中的平均数值
更快的写入速度，GB/s

11.6 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMD64GX4M4B2800C14 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 25
读取速度，GB/s

14.9 15.0
写入速度，GB/s

9.6 11.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3085

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F5-6000U3636E16G 16GB

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Kingston 99U5471-050.A00LF 8GB

Kingston 99U5471-050.A00LF 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-4133C19-8GTZKW 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-3200C16-16GTRS 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-2400C15-8GTZR 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB