Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology BLS16G4D26BFSB.16FBR 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更快的读取速度，GB/s

17.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.3 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

14.9 17.5
写入速度，GB/s

9.6 12.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3087

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Kingston 9905625-065.A00G 16GB

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Samsung M378B5173BH0-CH9 4GB

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Apacer Technology 78.B1GET.AU00C 4GB

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AMD R538G1601U2S 8GB

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Kingston 9965525-140.A00LF 8GB

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Corsair CMK128GX4M4A2400C16 32GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

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G Skill Intl F4-3200C16-8GVRB 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-4133C19-8GTZKW 8GB

G Skill Intl F4-4133C19-8GTZKW 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Samsung M471B5673EH1-CH9 2GB

Samsung M471B5673EH1-CH9 2GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB