Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT32G4SFD832A.M16FF 32GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 51

左右 16% 更低的延时

Crucial Technology CT32G4SFD832A.M16FF 32GB

需要考虑的原因
Crucial Technology CT32G4SFD832A.M16FF 32GB

报告一个错误

更快的读取速度，GB/s

16.3 14.9

测试中的平均数值
更快的写入速度，GB/s

14.7 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 51
读取速度，GB/s

14.9 16.3
写入速度，GB/s

9.6 14.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2506 2874

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

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G Skill Intl F4-3600C16-16GVKC 16GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston KHX3333C16D4/16GX 16GB

Samsung M3 78T5663RZ3-CE6 2GB

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G Skill Intl F4-3000C15-4GVRB 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB