Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT8G4SFD8213.C16FBD2 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.4

测试中的平均数值

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 43

左右 -13% 更低的延时
更快的写入速度，GB/s

10.8 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 38
读取速度，GB/s

14.9 13.4
写入速度，GB/s

9.6 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingston KVR16N11/8-SP 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston KY7N41-MIE 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Apacer Technology 78.B1GM3.AF00B 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-3600C18-32GTRS 32GB