Samsung DDR3 8GB 1600MHz 8GB vs Golden Empire CL19-25-25 D4-4000 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Golden Empire CL19-25-25 D4-4000 4GB

需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更快的读取速度，GB/s

17.5 14.9

测试中的平均数值
更快的写入速度，GB/s

12.8 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Golden Empire CL19-25-25 D4-4000 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

14.9 17.5
写入速度，GB/s

9.6 12.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Apacer Technology 78.CAGPP.40C0B 8GB

Apacer Technology 78.CAGPP.40C0B 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

AMD AP34G1608U1K 2GB

AMD AP34G1608U1K 2GB

SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology 78.BAGM6.40C0B 4GB

Apacer Technology 78.BAGM6.40C0B 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMW64GX4M8C3466C16 8GB

Corsair CMW64GX4M8C3466C16 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Crucial Technology ST25664BA1339.8FMR 2GB

Crucial Technology ST25664BA1339.8FMR 2GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB