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Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB

Samsung DDR3 8GB 1600MHz 8GB vs Patriot Memory (PDP Systems) PSD44G240081 4GB

总分
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

差异 规格 评论

差异

Samsung DDR3 8GB 1600MHz 8GB 需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB
报告一个错误
Patriot Memory (PDP Systems) PSD44G240081 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240081 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 43
    左右 -87% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 23
  • 读取速度，GB/s
    14.9 left arrow 15.9
  • 写入速度，GB/s
    9.6 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2506 left arrow 2622

Samsung DDR3 8GB 1600MHz 8GB RAM的比较

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Patriot Memory (PDP Systems) PSD44G240081 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston XJV223-MIE 16GB
Kingston XJV223-MIE 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4400C18-8GTRS 8GB
G Skill Intl F4-4400C18-8GTRS 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Samsung 9905599-020.A00G 16GB
Samsung 9905599-020.A00G 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK32GX4M2B3333C16 16GB
Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965600-023.A00G 16GB
Kingston 9965600-023.A00G 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2800C16-8GRK 8GB
G Skill Intl F4-2800C16-8GRK 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK32GX4M2Z4000C18 16GB
Corsair CMK32GX4M2Z4000C18 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM