Samsung M3 78T2863EHS-CF7 1GB vs A-DATA Technology DDR4 3600 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

A-DATA Technology DDR4 3600 8GB

A-DATA Technology DDR4 3600 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19.4

测试中的平均数值
更快的写入速度，GB/s

2,123.3 16.2

测试中的平均数值

A-DATA Technology DDR4 3600 8GB

需要考虑的原因
A-DATA Technology DDR4 3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 59

左右 -103% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

A-DATA Technology DDR4 3600 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 29
读取速度，GB/s

4,833.8 19.4
写入速度，GB/s

2,123.3 16.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston X2YH1K-MIE-NX 16GB

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Corsair CMR128GX4M8X3800C19 16GB

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Kingston 99U5458-008.A00LF 4GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

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Corsair CMK32GX4M2A2800C16 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMD64GX4M4A2400C14 16GB

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Samsung M378B5273CH0-CH9 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Crucial Technology BLE4G4D26AFEA.8FBD 4GB

Corsair CMD16GX3M2A1866C9 8GB

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Corsair CMW32GX4M4D3600C16 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

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Kingston 99U5474-022.A00LF 2GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB