Samsung M3 78T2863EHS-CF7 1GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,123.3 17.3

测试中的平均数值

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,833.8 18.2
写入速度，GB/s

2,123.3 17.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston XG9XKG-MIE 16GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

G Skill Intl F5-6400J3239G16G 16GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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Corsair CMK32GX4M4D3600C18 8GB

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Kingston 9965516-430.A00G 16GB

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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Kingston 99U5474-023.A00LF 4GB

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Kingston 9965684-013.A00G 8GB

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Corsair CMK8GX4M2B3866C18 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

A-DATA Technology AO1P26KC8T1-BXFSHC 8GB