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Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK128GX4M8B3333C16 16GB

Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMK128GX4M8B3333C16 16GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
Corsair CMK128GX4M8B3333C16 16GB

Corsair CMK128GX4M8B3333C16 16GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 10.4
    测试中的平均数值
Corsair CMK128GX4M8B3333C16 16GB 需要考虑的原因
Corsair CMK128GX4M8B3333C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 59
    左右 -79% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 2,123.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK128GX4M8B3333C16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 33
  • 读取速度，GB/s
    4,833.8 left arrow 10.4
  • 写入速度，GB/s
    2,123.3 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2283

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Corsair CMK128GX4M8B3333C16 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Samsung M3 78T2863EHS-CF7 1GB
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Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
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SK Hynix HMA851S6DJR6N-XN 4GB
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内存RAM
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内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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