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Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK16GX4M2Z4000C18 8GB
比较
Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMK16GX4M2Z4000C18 8GB
总分
Samsung M3 78T2863EHS-CF7 1GB
总分
Corsair CMK16GX4M2Z4000C18 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
17
测试中的平均数值
更快的写入速度,GB/s
2,123.3
16.3
测试中的平均数值
需要考虑的原因
Corsair CMK16GX4M2Z4000C18 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
59
左右 -119% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK16GX4M2Z4000C18 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
27
读取速度,GB/s
4,833.8
17.0
写入速度,GB/s
2,123.3
16.3
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
731
3784
Samsung M3 78T2863EHS-CF7 1GB RAM的比较
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Corsair CMK16GX4M2Z4000C18 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M393A2G40DBD-CP1???? 16GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Kingston 9905403-090.A01LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
Kingston HP698651-154-MCN 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Hexon Technology Pte Ltd HEXON 1GB
King Tiger Technology TMKU8G868-240U 8GB
Kingston 9905458-017.A01LF 4GB
Samsung M378A1K43DB2-CTD 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
Samsung M391B5673EH1-CH9 2GB
INTENSO 5641162 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M391A1K43BB1-CRC 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3200C14-16GTZSW 16GB
报告一个错误
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Bug description
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