Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMK32GX4M2B3466C16 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CMK32GX4M2B3466C16 16GB

Corsair CMK32GX4M2B3466C16 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.2

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.8

测试中的平均数值

Corsair CMK32GX4M2B3466C16 16GB

需要考虑的原因
Corsair CMK32GX4M2B3466C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 59

左右 -195% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMK32GX4M2B3466C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 20
读取速度，GB/s

4,833.8 20.2
写入速度，GB/s

2,123.3 15.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3665

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Unifosa Corporation HU564404EP0200 4GB

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Crucial Technology CT16G4SFD824A.M16FE 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Essencore Limited KD48GU880-36A180X 8GB

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Crucial Technology CT8G4DFD8213.C16FADP 8GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMW64GX4M8C3200C16 8GB

Corsair CMW64GX4M8C3200C16 8GB

Samsung M471B5673FH0-CF8 2GB

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Avant Technology J642GU42J9266N4 16GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB