Samsung M3 78T2863EHS-CF7 1GB vs Corsair CMSO32GX4M2A2133C15 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.1

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.6

测试中的平均数值

Corsair CMSO32GX4M2A2133C15 16GB

需要考虑的原因
Corsair CMSO32GX4M2A2133C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 59

左右 -44% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMSO32GX4M2A2133C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 41
读取速度，GB/s

4,833.8 13.1
写入速度，GB/s

2,123.3 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Ramaxel Technology RMSA3260MD78HAF-2666 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Samsung M393B5170FH0-CH9 4GB

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Kingston KF3733C19D4/16GX 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB