Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14

测试中的平均数值

Crucial Technology CB8GS2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 59

左右 -51% 更低的延时
更快的写入速度，GB/s

9.1 2,123.3

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CB8GS2666.C8ET 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 39
读取速度，GB/s

4,833.8 14.0
写入速度，GB/s

2,123.3 9.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 2221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMK16GX4M1B3000C15 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Apacer Technology 78.01G86.9H50C 1GB

Kingston 9965698-001.A00G 16GB

Kingston 9965698-001.A00G 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Kingston 9905599-026.A00G 8GB

Kingston 9905599-026.A00G 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-2133C15-4GRS 4GB

G Skill Intl F4-2133C15-4GRS 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

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G Skill Intl F4-4000C15-8GTZR 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Corsair CMR16GX4M2K4266C19 8GB

Corsair CMR16GX4M2K4266C19 8GB