Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CT32G4SFD832A.M16FB 32GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.6

测试中的平均数值

Crucial Technology CT32G4SFD832A.M16FB 32GB

需要考虑的原因
Crucial Technology CT32G4SFD832A.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 59

左右 -97% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 30
读取速度，GB/s

4,833.8 16.8
写入速度，GB/s

2,123.3 15.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

731 3423

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Corsair CMR16GX4M2C3000C15 8GB

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Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Kingston 9965669-032.A00G 16GB

Kingston 9965669-032.A00G 16GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Transcend Information TS2GLH64V1B 16GB

Transcend Information TS2GLH64V1B 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3600C16-32GTZR 32GB

G Skill Intl F4-3600C16-32GTZR 32GB