Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CT4G4DFS824A.M8FB 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,123.3 12.2

测试中的平均数值

Crucial Technology CT4G4DFS824A.M8FB 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.M8FB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 59

左右 -168% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 22
读取速度，GB/s

4,833.8 17.0
写入速度，GB/s

2,123.3 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BLE8G4D30AEEA.K16FD 8GB

Crucial Technology BLE8G4D30AEEA.K16FD 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB