Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-2400C15-8GFT 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 12.2

测试中的平均数值

G Skill Intl F4-2400C15-8GFT 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GFT 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 59

左右 -74% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2400C15-8GFT 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 34
读取速度，GB/s

4,833.8 16.8
写入速度，GB/s

2,123.3 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB

Smart Modular SH564568FH8N6PHSFG 2GB

Smart Modular SH564568FH8N6PHSFG 2GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMW16GX4M2C3200C14 8GB

Corsair CMW16GX4M2C3200C14 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Corsair CMW16GX4M2D3600C16 8GB

Corsair CMW16GX4M2D3600C16 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905712-001.B00G 16GB

Kingston 9905712-001.B00G 16GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB