Samsung M3 78T2863EHS-CF7 1GB vs G Skill Intl F4-3600C19-8GSXW 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

G Skill Intl F4-3600C19-8GSXW 8GB

G Skill Intl F4-3600C19-8GSXW 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 16.3

测试中的平均数值

G Skill Intl F4-3600C19-8GSXW 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 59

左右 -228% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C19-8GSXW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 18
读取速度，GB/s

4,833.8 20.5
写入速度，GB/s

2,123.3 16.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3575

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology AFLD48EH1P 8GB

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INTENSO GKE800UD102408-2133 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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SK Hynix DDR2 800 2G 2GB

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Corsair CMK32GX4M2D3600C16 16GB

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Corsair CMT16GX4M2C3200C16 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB