Samsung M3 78T2863EHS-CF7 1GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 26.4

测试中的平均数值
更快的写入速度，GB/s

2,123.3 19.8

测试中的平均数值

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

报告一个错误

低于PassMark测试中的延时，ns

14 59

左右 -321% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 14
读取速度，GB/s

4,833.8 26.4
写入速度，GB/s

2,123.3 19.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 4362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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