Samsung M3 78T2863EHS-CF7 1GB vs GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19.4

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.7

测试中的平均数值

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 59

左右 -79% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 33
读取速度，GB/s

4,833.8 19.4
写入速度，GB/s

2,123.3 15.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMK32GX4M2D3600C16 16GB

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Corsair CMR128GX4M8Z2933C16 16GB

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Peak Electronics 256X64M-67E 2GB

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Crucial Technology BL8G32C16U4RL.M8FE1 8GB

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Samsung M471B5773DH0-CK0 2GB

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Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Samsung M378B5273CH0-CH9 4GB

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Kingston 9905744-077.A00G 16GB

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Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB