Samsung M3 78T2863EHS-CF7 1GB vs Hewlett-Packard 7EH64AA# 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Hewlett-Packard 7EH64AA# 8GB

Hewlett-Packard 7EH64AA# 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.5

测试中的平均数值

Hewlett-Packard 7EH64AA# 8GB

需要考虑的原因
Hewlett-Packard 7EH64AA# 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 59

左右 -79% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Hewlett-Packard 7EH64AA# 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 33
读取速度，GB/s

4,833.8 17.5
写入速度，GB/s

2,123.3 13.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 3438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston 99U5474-010.A00LF 2GB

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Apacer Technology 78.CAGP7.AZ20B 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Corsair CMSX64GX4M4A2400C16 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT8G4SFRA32A.C16FG 8GB

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Patriot Memory (PDP Systems) PSD48G24002 8GB

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Corsair CM2X1024-8500C5D 1GB

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Teikon TMA81GU6AFR8N-UHSC 8GB

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Samsung M391B5673FH0-CH9 2GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BLS16G4S26BFSD.16FBD 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology CT4G4DFS8213.8FA11 4GB

Micron Technology CT4G4DFS8213.8FA11 4GB

G Skill Intl F2-5300CL4-1GBSA 1GB

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Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB