RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
比较
Samsung M3 78T2863EHS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
总分
Samsung M3 78T2863EHS-CF7 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
11.6
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
33
59
左右 -79% 更低的延时
更快的写入速度,GB/s
8.3
2,123.3
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
33
读取速度,GB/s
4,833.8
11.6
写入速度,GB/s
2,123.3
8.3
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
731
2227
Samsung M3 78T2863EHS-CF7 1GB RAM的比较
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB RAM的比较
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT102464BF160B-16F 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3800C14-8GTZN 8GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Kingston K1N7HK-HYC 2GB
Corsair CMT128GX4M4C3200C16 32GB
Samsung M378B5273CH0-CH9 4GB
Samsung M378A5143TB2-CTD 4GB
Qimonda 64T128020EDL2.5C2 1GB
Apacer Technology GD2.1542WS.003 8GB
Corsair CM2X1024-6400C4 1GB
Kingston 9905734-003.A00G 32GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMWX16GC3600C18W2D 16GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393A2K43CB1-CRC 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M4K3733C17 16GB
Micron Technology ILG8GS2400A 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
报告一个错误
×
Bug description
Source link