Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9905622-057.A00G 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9905622-057.A00G 4GB

Kingston 9905622-057.A00G 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.8

测试中的平均数值

Kingston 9905622-057.A00G 4GB

需要考虑的原因
Kingston 9905622-057.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 59

左右 -84% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905622-057.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 32
读取速度，GB/s

4,833.8 16.0
写入速度，GB/s

2,123.3 11.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KF3200C20S4/8G 8GB

Kingston 9905316-106.A02LF 1GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Kingston 9905622-057.A00G 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-2400C15-16GTZR 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

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A-DATA Technology DDR4 4133 2OZ 8GB

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Kingston 9905701-004.A00G 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965600-012.A01G 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

Kingston 9965640-013.A01G 32GB

Kingston 9965640-013.A01G 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905670-012.A00G 8GB

Kingston 9905670-012.A00G 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3333C16-8GVR 8GB

G Skill Intl F4-3333C16-8GVR 8GB