Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9905678-006.A00G 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9905678-006.A00G 4GB

Kingston 9905678-006.A00G 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.9

测试中的平均数值

Kingston 9905678-006.A00G 4GB

需要考虑的原因
Kingston 9905678-006.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 59

左右 -127% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905678-006.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 26
读取速度，GB/s

4,833.8 14.8
写入速度，GB/s

2,123.3 10.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2412

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology BLS4G4D240FSA.8FAR 4GB

Crucial Technology BLS4G4D240FSA.8FAR 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905663-006.A00G 16GB

Kingston 9905663-006.A00G 16GB

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMK64GX4M8Z2933C16 8GB

Corsair CMK64GX4M8Z2933C16 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3600C18-8GTZN 8GB

G Skill Intl F4-3600C18-8GTZN 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N