Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9905744-066.A00G 32GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9905744-066.A00G 32GB

Kingston 9905744-066.A00G 32GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 14.7

测试中的平均数值

Kingston 9905744-066.A00G 32GB

需要考虑的原因
Kingston 9905744-066.A00G 32GB

报告一个错误

低于PassMark测试中的延时，ns

47 59

左右 -26% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905744-066.A00G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 47
读取速度，GB/s

4,833.8 17.8
写入速度，GB/s

2,123.3 14.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

731 3099

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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EVGA 8GX-D4-3000-MR 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Crucial Technology BLS16G4D240FSE.16FBD 16GB

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Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-2400C17-4GNT 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905744-066.A00G 32GB

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Kingston 99U5429-007.A00LF 2GB

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Crucial Technology CT8G4DFS8266.M8FJ 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

Corsair CMY8GX3M2A2133C8 4GB

Corsair CMY8GX3M2A2133C8 4GB

G Skill Intl F4-3200C14-32GVK 32GB

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Kingston K1N7HK-ELC 2GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMK64GX4M8B2800C14 8GB

Corsair CMK64GX4M8B2800C14 8GB