Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9965667-001.A00G 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 10.1

测试中的平均数值

Kingston 9965667-001.A00G 16GB

需要考虑的原因
Kingston 9965667-001.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 59

左右 -51% 更低的延时
更快的写入速度，GB/s

7.7 2,123.3

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9965667-001.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 39
读取速度，GB/s

4,833.8 10.1
写入速度，GB/s

2,123.3 7.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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SK Hynix HMA451U7MFR8N-TF 4GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB