Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9965745-002.A00G 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9965745-002.A00G 16GB

Kingston 9965745-002.A00G 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.2

测试中的平均数值

Kingston 9965745-002.A00G 16GB

需要考虑的原因
Kingston 9965745-002.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

56 59

左右 -5% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9965745-002.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 56
读取速度，GB/s

4,833.8 15.8
写入速度，GB/s

2,123.3 11.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston KHX2800C14D4/8GX 8GB

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Corsair CMW32GX4M4Z4000C18 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 9905598-025.A00G 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB