Samsung M3 78T2863EHS-CF7 1GB vs Kllisre 99P5428-002.A00LF 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kllisre 99P5428-002.A00LF 8GB

Kllisre 99P5428-002.A00LF 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11.2

测试中的平均数值

Kllisre 99P5428-002.A00LF 8GB

需要考虑的原因
Kllisre 99P5428-002.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 59

左右 -26% 更低的延时
更快的写入速度，GB/s

7.9 2,123.3

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kllisre 99P5428-002.A00LF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 47
读取速度，GB/s

4,833.8 11.2
写入速度，GB/s

2,123.3 7.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 2227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFRA32A.M4FE 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK64GX4M4X4000C18 16GB

Corsair CMK64GX4M4X4000C18 16GB

Team Group Inc. UD5-6400 16GB

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Kingston KP4T2F-PSB 4GB

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SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

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G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston KF3200C20S4/16G 16GB

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Samsung M474A4G43MB1-CTD 32GB