Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 10.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 59

左右 -79% 更低的延时
更快的写入速度，GB/s

8.1 2,123.3

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 33
读取速度，GB/s

4,833.8 10.3
写入速度，GB/s

2,123.3 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMR32GX4M4C3333C16 8GB

Corsair CMR32GX4M4C3333C16 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

Crucial Technology BL32G32C16S4B.M16FB1 32GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Corsair CMT32GX4M4Z3200C16 8GB

Corsair CMT32GX4M4Z3200C16 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB