Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.5

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1R 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 59

左右 -55% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 38
读取速度，GB/s

4,833.8 15.3
写入速度，GB/s

2,123.3 10.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2346

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8266.C8FE 4GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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