Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 8ATF1G64AZ-2G6J1 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.0

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G6J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 59

左右 -97% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 30
读取速度，GB/s

4,833.8 16.7
写入速度，GB/s

2,123.3 11.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

731 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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SK Hynix HMT351U6CFR8C-H9 4GB

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I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Samsung M378A2G43MB1-CTD 16GB

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Kingston 99U5469-045.A00LF 4GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston 99U5665-001.A00G 4GB