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Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA81GU6MFR8N-UH 8GB

Samsung M3 78T2863EHS-CF7 1GB vs SK Hynix HMA81GU6MFR8N-UH 8GB

总分
star star star star star
Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分
star star star star star
SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

差异 规格 评论

差异

Samsung M3 78T2863EHS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,123.3 left arrow 11.4
    测试中的平均数值
SK Hynix HMA81GU6MFR8N-UH 8GB 需要考虑的原因
SK Hynix HMA81GU6MFR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 59
    左右 -69% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA81GU6MFR8N-UH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 35
  • 读取速度，GB/s
    4,833.8 left arrow 15.7
  • 写入速度，GB/s
    2,123.3 left arrow 11.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    731 left arrow 2768

Samsung M3 78T2863EHS-CF7 1GB RAM的比较

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
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SK Hynix HMT41GS6AFR8A-PB 8GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
内存RAM
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内存RAM
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Smart Modular SF4641G8CK8I8HLSBG 8GB
内存RAM
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G Skill Intl F4-2666C15-8GRR 8GB
内存RAM
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Kingston 9965433-034.A00LF 4GB
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SK Hynix HMAA2GU6CJR8N-XN 16GB
内存RAM