RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
比较
Samsung M3 78T2863EHS-CF7 1GB vs Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
总分
Samsung M3 78T2863EHS-CF7 1GB
总分
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
21.6
测试中的平均数值
更快的写入速度,GB/s
2,123.3
18.2
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
59
左右 -111% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2863EHS-CF7 1GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
28
读取速度,GB/s
4,833.8
21.6
写入速度,GB/s
2,123.3
18.2
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
731
3890
Samsung M3 78T2863EHS-CF7 1GB RAM的比较
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
Samsung M3 78T2863EHS-CF7 1GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Corsair CMT32GX5M2X5600C36 16GB
Corsair CM5S16GM4800A40K2 16GB
Corsair CML8GX3M2A1600C9 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMD32GX4M2B3000C15 16GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-2666C15-8GVB 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905702-204.A00G 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingston 9905743-044.A00G 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 99U5700-032.A00G 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905624-018.A00G 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
报告一个错误
×
Bug description
Source link