Samsung M3 78T2863QZS-CF7 1GB vs Corsair CMD8GX4M2B3466C18 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19

测试中的平均数值

Corsair CMD8GX4M2B3466C18 4GB

需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 69

左右 -245% 更低的延时
更快的写入速度，GB/s

15.3 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMD8GX4M2B3466C18 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 20
读取速度，GB/s

4,217.2 19.0
写入速度，GB/s

1,857.7 15.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston 99U5678-029.A00G 8GB

Kingston 99U5678-029.A00G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB