Samsung M3 78T2863QZS-CF7 1GB vs Corsair CMK32GX4M2A2666C16 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Corsair CMK32GX4M2A2666C16 16GB

Corsair CMK32GX4M2A2666C16 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值

Corsair CMK32GX4M2A2666C16 16GB

需要考虑的原因
Corsair CMK32GX4M2A2666C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

12.8 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMK32GX4M2A2666C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

4,217.2 16.6
写入速度，GB/s

1,857.7 12.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3293

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston 9905403-011.A03LF 2GB

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G Skill Intl F4-2400C14-4GRK 4GB

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Kingston 9905403-061.A00LF 2GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Corsair CMK8GX4M2B4266C19 4GB

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Samsung M393B1K70QB0-CK0 8GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston 9905712-010.A00G 16GB