Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology BL8G32C16U4BL.M8FE1 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.2

测试中的平均数值

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4BL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 69

左右 -138% 更低的延时
更快的写入速度，GB/s

15.7 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 29
读取速度，GB/s

4,217.2 20.2
写入速度，GB/s

1,857.7 15.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 3559

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMK8GX4M2A2800C16 4GB

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SK Hynix HMAA2GU6CJR8N-XN 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston KHX1600C9D3/4G 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Patriot Memory (PDP Systems) PSD48G213381S 8GB