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Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology BLE4G4D32AEEA.K8FE 4GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Crucial Technology BLE4G4D32AEEA.K8FE 4GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 22.9
    测试中的平均数值
Crucial Technology BLE4G4D32AEEA.K8FE 4GB 需要考虑的原因
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 69
    左右 -165% 更低的延时
  • 更快的写入速度，GB/s
    17.7 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 26
  • 读取速度，GB/s
    4,217.2 left arrow 22.9
  • 写入速度，GB/s
    1,857.7 left arrow 17.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 3962

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Crucial Technology BLE4G4D32AEEA.K8FE 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
V-GEN D4H4GL30A8TS5 4GB
V-GEN D4H4GL30A8TS5 4GB
内存RAM
Mushkin 994083 4GB
Mushkin 994083 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Apacer Technology 78.C1GQB.4032B 8GB
Apacer Technology 78.C1GQB.4032B 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
内存RAM