Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT4G4DFS824A.C8FADP 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16

测试中的平均数值

Crucial Technology CT4G4DFS824A.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 69

左右 -176% 更低的延时
更快的写入速度，GB/s

11.0 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 25
读取速度，GB/s

4,217.2 16.0
写入速度，GB/s

1,857.7 11.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2544

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Samsung M393B2G70BH0-YK0 16GB

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G Skill Intl F4-3000C15-4GVSB 4GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Smart Modular SF4641G8CKHIWDFSEG 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

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Kingston 9905474-019.A00LF 2GB

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Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB