Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3200C15-16GTZR 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值

G Skill Intl F4-3200C15-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 69

左右 -123% 更低的延时
更快的写入速度，GB/s

15.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3200C15-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 31
读取速度，GB/s

4,217.2 17.2
写入速度，GB/s

1,857.7 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863QZS-CF7 1GB

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G Skill Intl F4-3200C15-16GTZR 16GB

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Crucial Technology CT8G4DFS632A.M4FE 8GB

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Corsair CMR64GX4M4K3600C18 16GB

Corsair CMR64GX4M4K3600C18 16GB

Kingston KVR16N11/8-SP 8GB

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Kingston 99U5471-052.A00LF 8GB

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Crucial Technology BL16G32C16U4BL.M8FB1 16GB

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Kingston 99U5471-012.A00 4GB

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Corsair CMK16GX4M4A2800C16 4GB

Corsair CMK16GX4M4A2800C16 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB