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Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-32GTZN 32GB

Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3600C16-32GTZN 32GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.6
    测试中的平均数值
G Skill Intl F4-3600C16-32GTZN 32GB 需要考虑的原因
G Skill Intl F4-3600C16-32GTZN 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 69
    左右 -130% 更低的延时
  • 更快的写入速度，GB/s
    15.6 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-32GTZN 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 30
  • 读取速度，GB/s
    4,217.2 left arrow 18.6
  • 写入速度，GB/s
    1,857.7 left arrow 15.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    668 left arrow 3792

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

G Skill Intl F4-3600C16-32GTZN 32GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-32GTZN 32GB
G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Samsung M471B5173DB0-YK0 4GB
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G Skill Intl F4-4000C19-16GTRS 16GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
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EVGA 16G-D4-2800-MR 4GB
内存RAM
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Apacer Technology 78.BAGSR.4030B 4GB
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