Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3733C17-4GVK 4GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

G Skill Intl F4-3733C17-4GVK 4GB

G Skill Intl F4-3733C17-4GVK 4GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19

测试中的平均数值

G Skill Intl F4-3733C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3733C17-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 69

左右 -229% 更低的延时
更快的写入速度，GB/s

14.4 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3733C17-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 21
读取速度，GB/s

4,217.2 19.0
写入速度，GB/s

1,857.7 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 3216

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863QZS-CF7 1GB

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A-DATA Technology AO1P32MC8T1-BW3S 8GB

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Crucial Technology BL8G32C16U4W.8FE 8GB

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Corsair CMK32GX4M2D3000C16 16GB

Corsair CMK32GX4M2D3000C16 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston HP32D4U8S8ME-8XR 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Corsair CMW64GX4M4D3600C18 16GB

Corsair CMW64GX4M4D3600C18 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB