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Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3866C18-4GVK 4GB

Samsung M3 78T2863QZS-CF7 1GB vs G Skill Intl F4-3866C18-4GVK 4GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.2
    测试中的平均数值
G Skill Intl F4-3866C18-4GVK 4GB 需要考虑的原因
G Skill Intl F4-3866C18-4GVK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 69
    左右 -263% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3866C18-4GVK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 19
  • 读取速度，GB/s
    4,217.2 left arrow 19.2
  • 写入速度，GB/s
    1,857.7 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 3075

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

G Skill Intl F4-3866C18-4GVK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Essencore Limited KD44GU481-26N1600 4GB
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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F4-3600C19-8GSXF 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
AMD AE34G1601U1 4GB
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内存RAM
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SK Hynix HMT31GR7CFR4C-PB 8GB
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G Skill Intl F4-2666C18-8GTZR 8GB
内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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