Samsung M3 78T2863QZS-CF7 1GB vs Kingston 9905624-051.A00G 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Kingston 9905624-051.A00G 8GB

Kingston 9905624-051.A00G 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

69 74

左右 7% 更低的延时
更快的读取速度，GB/s

4 14.1

测试中的平均数值

Kingston 9905624-051.A00G 8GB

需要考虑的原因
Kingston 9905624-051.A00G 8GB

报告一个错误

更快的写入速度，GB/s

6.3 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Kingston 9905624-051.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 74
读取速度，GB/s

4,217.2 14.1
写入速度，GB/s

1,857.7 6.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 1495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F4-3600C19-16GTRG 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Kingston KF3200C16D4/32GX 32GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Kingston 9905702-119.A00G 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Kingston HX424C15FB/16 16GB

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Kingston 9905403-174.A00LF 2GB

Kingston KHX2666C15S4/16G 16GB

Kingston KHX2666C15S4/16G 16GB