Samsung M3 78T2863QZS-CF7 1GB vs Maxsun MSD48G32Q3 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

低于PassMark测试中的延时，ns

69 94

左右 27% 更低的延时
更快的读取速度，GB/s

4 13.5

测试中的平均数值

Maxsun MSD48G32Q3 8GB

需要考虑的原因
Maxsun MSD48G32Q3 8GB

报告一个错误

更快的写入速度，GB/s

11.3 1,857.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Maxsun MSD48G32Q3 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 94
读取速度，GB/s

4,217.2 13.5
写入速度，GB/s

1,857.7 11.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

668 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT128GX4M8X3600C18 16GB

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Corsair CMD16GX3M2A1600C7 8GB

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Crucial Technology BL8G30C15U4W.8FE 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Kingston 99U5701-036.A00G 16GB

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Crucial Technology CT8G4DFS8266.M8FE 8GB

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AMD AE34G1601U1 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Apacer Technology GD2.1527WE.001 8GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

Kingston 9905663-030.A00G 16GB

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Kingston 99U5474-028.A00LF 4GB

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G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB