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Samsung M3 78T2863QZS-CF7 1GB
Panram International Corporation PUD42400C154G2NJK 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.5
    测试中的平均数值
Panram International Corporation PUD42400C154G2NJK 4GB 需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 69
    左右 -165% 更低的延时
  • 更快的写入速度，GB/s
    8.3 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Panram International Corporation PUD42400C154G2NJK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 26
  • 读取速度，GB/s
    4,217.2 left arrow 13.5
  • 写入速度，GB/s
    1,857.7 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    668 left arrow 2157

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Panram International Corporation PUD42400C154G2NJK 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT102464BF160B.C16 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905624-044.A00G 8GB
Kingston 9905624-044.A00G 8GB
内存RAM
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CM4B8G2J2400A14K 8GB
Corsair CM4B8G2J2400A14K 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Corsair CMSX32GX4M1A2666C18 32GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-4000C16-16GVKA 16GB
G Skill Intl F4-4000C16-16GVKA 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Golden Empire CL18-20-20 D4-3600 8GB
Golden Empire CL18-20-20 D4-3600 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
Crucial Technology BLS4G4S240FSD.8FBD 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CM4X4GF2400C16K4 4GB
Corsair CM4X4GF2400C16K4 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
SK Hynix HMA851S6DJR6N-VK 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM