Samsung M3 78T5663EH3-CF7 2GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值
更快的写入速度，GB/s

2,451.8 10.6

测试中的平均数值

Crucial Technology CT16G4SFD824A.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBR 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 65

左右 -86% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 35
读取速度，GB/s

4,605.9 14.5
写入速度，GB/s

2,451.8 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965639-002.A01G 8GB

Kingston 9965639-002.A01G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

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Corsair CMD16GX3M2A1866C9 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

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SK Hynix HMT31GR7CFR4C-PB 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB