Samsung M3 78T5663EH3-CF7 2GB vs G Skill Intl F4-4133C19-8GTZKW 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

G Skill Intl F4-4133C19-8GTZKW 8GB

G Skill Intl F4-4133C19-8GTZKW 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,451.8 15.0

测试中的平均数值

G Skill Intl F4-4133C19-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 65

左右 -150% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

G Skill Intl F4-4133C19-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 26
读取速度，GB/s

4,605.9 17.9
写入速度，GB/s

2,451.8 15.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

G Skill Intl F4-4133C19-8GTZKW 8GB

G Skill Intl F4-4133C19-8GTZKW 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Kingston 9905702-029.A00G 8GB

Kingston 9905702-029.A00G 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB