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Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
比较
Samsung M3 78T5663EH3-CF7 2GB vs Samsung M3 78T5663EH3-CF7 2GB
总分
Samsung M3 78T5663EH3-CF7 2GB
总分
Samsung M3 78T5663EH3-CF7 2GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
规格
完整的技术规格清单
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
主要特点
存储器类型
DDR2
DDR2
PassMark中的延时,ns
65
65
读取速度,GB/s
4,605.9
4,605.9
写入速度,GB/s
2,451.8
2,451.8
内存带宽,mbps
6400
6400
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度
5-5-5-15 / 800 MHz
5-5-5-15 / 800 MHz
排名PassMark (越多越好)
878
878
Samsung M3 78T5663EH3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMD16GX4M4A2666C16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2400C15D4/16GX 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905702-121.A00G 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3000C15-8GVS 8GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Corsair CMX4GX3M1A1333C9 4GB
Samsung M471A2K43CB1-CTD 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK8GX4M2B3733C17 4GB
Kingston 99P5474-014.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C14-16GVR 16GB
报告一个错误
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