Samsung M3 78T5663EH3-CF7 2GB vs Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.9

测试中的平均数值
更快的写入速度，GB/s

2,451.8 14.9

测试中的平均数值

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 65

左右 -103% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 32
读取速度，GB/s

4,605.9 19.9
写入速度，GB/s

2,451.8 14.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

878 3372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-006.A01LF 4GB

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Kingston 9905403-444.A00LF 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB